CJD112 npn cjd117 pnp surface mount complementary silicon power darlington transistors description: the central semiconductor CJD112, cjd117 types are complementary silicon power darlington transistors manufactured in a surface mount package designed for low speed switching and amplifier applications. marking: full part number dpak transistor case maximum ratings: (t c =25c unless otherwise noted) symbol units collector-base voltage v cbo 100 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 5.0 v continuous collector current i c 2.0 a peak collector current i cm 4.0 a continuous base current i b 50 ma power dissipation p d 20 w power dissipation (t a =25c) p d 1.75 w operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance jc 6.25 c/w thermal resistance ja 71.4 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min max units i ceo v ce =50v 20 a i cev v ce =80v, v be(off) =1.5v 10 a i cev v ce =80v, v be(off) =1.5v, t c =125c 500 a i cbo v cb =80v 10 a i cbo v cb =100v 20 a i ebo v eb =5.0v 2.0 ma bv ceo i c =30ma 100 v v ce(sat) i c =2.0a, i b =8.0ma 2.0 v v ce(sat) i c =4.0a, i b =40ma 3.0 v v be(sat) i c =4.0a, i b =40ma 4.0 v v be(on) v ce =3.0v, i c =2.0a 2.8 v h fe v ce =3.0v, i c =0.5a 500 h fe v ce =3.0v, i c =2.0a 1000 12000 h fe v ce =3.0v, i c =4.0a 200 f t v ce =10v, i c =750ma, f=1.0mhz 25 mhz c ob v cb =10v, i e =0, f=0.1mhz (CJD112) 100 pf c ob v cb =10v, i e =0, f=0.1mhz (cjd117) 200 pf r2 (4-january 2010) www.centralsemi.com
CJD112 npn cjd117 pnp surface mount complementary silicon power darlington transistors dpak transistor case - mechanical outline lead code: b) base c) collector e) emitter c) collector marking: full part number www.centralsemi.com r2 (4-january 2010)
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